high speed. high reliability. suitable for hig packing density layout. ultra high speed switching silicon epitaxial planar type no. marking package code DAP202 p sot-23 maximum rating @ ta=25 unless otherwise specified parameter symbol limits unit non-repetitive peak reverse voltage v rm 80 v dc reverse voltage v r 80 v forward continuous current(single) i fm 300 ma average rectified forward current(single) i o 100 ma surge current (t=1.0us) i surge 4 a power dissipation p d 200 mw junction temperature t j 150 storage temperature range t stg -55 -+150 pb lead-free DAP202 dual surface mount fast switching diode dimensions in inches and (millimeters) sot-23 features applications ordering information ? ? ? ? ? http://www.luguang.cn mail:lge@luguang.cn
electrical characteristics @ ta=25 unless otherwise specified parameter symbol test conditions min max unit reverse voltage leakage current i r v r =70v 0.1 a forward voltage v f i f =100ma 1.2 v total capacitance c t v r =6v,f=1mhz 3.5 pf reverse recovery time t rr i f =5ma,v r =6v, r l =50 ? 4 ns typical characteristics @ ta=25 unless otherwise specified DAP202 dual surface mount fast switching diode http://www.luguang.cn mail:lge@luguang.cn
|
